Masking of deposited thin films has been achieved through the use of a composite mask consisting of a positive acting photoresist layer and an overlying aluminum layer. The overlying aluminum layer acts as a deposition mask which is spaced away from the substrate at a distance equal to the thickness of the underlying photoresist layer. The photoresist layer, which acts to keep the aluminum layer in close proximity to the substrate, is patterned through the use of the overlying aluminum layer as an exposure mask. Recession of the edges of the photoresist layer is achieved by overexposure and subsequent development.

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