Pentacene transistor encapsulated by poly-para-xylylene behaving as gate dielectric insulator and passivation film Appl.Poly-para-xylylene family thin films deposited by vapor phase polymerization are pin hole free and are chemically inert to most acids, alkalies, and organic solvents. These properties make this material very attractive as a passivation agent on top of devices. This paper discusses the patterning of such films on planar structures by various masking techniques and the reactive ion etching (RIE) of the poly(monochloro-p-xylylene) in an oxygen-containing plasma, including details like etch rates, control of edge profiles (vertical or tapered), and the process parameters to achieve patterns of 1.5 fim wide and below.

Masking of deposited thin films has been achieved through the use of a composite mask consisting of a positive acting photoresist layer and an overlying aluminum layer. The overlying aluminum layer acts as a deposition mask which is spaced away from the substrate at a distance equal to the thickness of the underlying photoresist layer. The photoresist layer, which acts to keep the aluminum layer in close proximity to the substrate, is patterned through the use of the overlying aluminum layer as an exposure mask. Recession of the edges of the photoresist layer is achieved by overexposure and subsequent development.

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