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An experimental and theoretical investigation is made on the current pulse evolution, from a very low amplitude toward the steady-state shapes, if a sequence of alternative voltage pulses is applied to a ZnS:Mn metal-insulator-semiconductor-insulator-metal structure. The influence on this evolution of the voltage pulse maximum amplitude, of its rising slope, of pulse shape, and of the frequency is investigated. A quantitative model is developed which explains the current pulse evolution taking into account the competition between the multiplication of the carriers in the ZnS layer, and their recombination involving deep hole traps. The model describes the shapes of current pulse evolution and their peculiarities corresponding to different experimental conditions.

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The shapes of current versus time curves in ZnS: Mn MISIM structures are studied in dependence on voltage, temperature, and Mn concentration. The experimental curves compare well with those computed on the basis of a tunneling model which takes into account the presence of the internal field due to bulk ionized centres and the filling level of the interface states.

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