Weak localization effects in ZnO surface wells

Goldenblum, A.; Bogatu, V.; Stoica, T.; Goldstein, Y.; Many, A.

doi:10.1103/physrevb.60.5832

Cited by 31 publications

(22 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Considering the above discussions, the modified form of equation was given by [27,28] interactions (a 1 ) with respect to e-ph scattering (a 2 ) was found to be increasing with Dy doping concentration which is in line with available reports [27,28]. When doping concentration increases, mainly two things can occur in this contest.…”

Section: Resultssupporting

confidence: 79%

Quantum corrections to low temperature electrical conductivity in Dy doped ZnO thin films

et al. 2015

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 79%

Quantum corrections to low temperature electrical conductivity in Dy doped ZnO thin films

et al. 2015

View full text Add to dashboard Cite

“…[14][15][16] In early stage of ZnO studies from 1960's to 90's, excitonic features had been intensively investigated by optical measurements of high quality single crystals. [17][18][19][20][21] In addition, surface charge transport had also been studied based on single crystal surfaces with electrolyte or ion implantations of He or H. [22][23][24] However, it had been difficult to apply ZnO single crystal substrates to thin film growth until around 2003 due to their high cost, short supply, Li contamination, and so on. In addition, it was necessary to develop a method making the surface of ZnO single crystal substrates epi-ready and atomically flat.…”

Section: A Reduction Of Impurities In Zno Substratementioning

confidence: 99%

Challenges and opportunities of ZnO-related single crystalline heterostructures

Kozuka

Tsukazaki

Kawasaki

2014

Applied Physics Reviews

131

View full text Add to dashboard Cite

Recent technological advancement in ZnO heterostructures has expanded the possibility of device functionalities to various kinds of applications. In order to extract novel device functionalities in the heterostructures, one needs to fabricate high quality films and interfaces with minimal impurities, defects, and disorder. With employing molecular-beam epitaxy (MBE) and single crystal ZnO substrates, the density of residual impurities and defects can be drastically reduced and the optical and electrical properties have been dramatically improved for the ZnO films and heterostructures with Mg x Zn 1-x O. Here, we overview such recent technological advancement from various aspects of application. Towards optoelectronic devices such as a light emitter and a photodetector in an ultraviolet region, the development of p-type ZnO and the fabrication of excellent Schottky contact, respectively, have been subjected to intensive studies for years. For the former, the fine tuning of the growth conditions to make Mg x Zn 1-x O as intrinsic as possible has opened the possibilities of making p-type Mg x Zn 1-x O through NH 3 doping method. For the latter, conducting and transparent polymer films spin-coated on Mg x Zn 1-x O was shown to give almost ideal Schottky junctions. The wavelength-selective detection can be realized with varying the Mg content. From the viewpoint of electronic devices, two-dimensional electrons confined at the Mg x Zn 1-x O/ZnO interfaces are promising candidate for quantum devices becauseof high electron mobility and strong electron-electron correlation effect. These wonderful features and tremendous opportunities in ZnO-based heterostructures make this system unique and promising in oxide electronics and will lead to new quantum functionalities in optoelectronic devices and electronic applications with lower energy consumption and high performance.

show abstract

“…21 The positive MR decreases with increasing temperature and disappears at room temperature. We also found small negative MR due to a weak localization, 22 as shown in Fig. 4b.…”

Section: Resultsmentioning

confidence: 70%

Room-temperature ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition

Shim

Jeon

Lee

et al. 2006

J. Electron. Mater.

View full text Add to dashboard Cite

The ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition (PLD) as a function of oxygen pressure and substrate temperature has been investigated. Room-temperature ferromagnetic behaviors in the Mn-doped ZnO films grown at 700°C and 800°C under 10 ÿ1 torr in oxygen pressure were found, whereas ferromagnetic ordering in the films grown under 10 ÿ3 torr disappeared at 300 K. The large positive magnetoresistance (MR), ;10%, was observed at 5 K at low fields and small negative MR was observed at high fields, irrespective of oxygen pressure. In particular, anomalous Hall effect (AHE) in the Mn-doped ZnO film grown at 700°C under 10 ÿ1 Torr has been observed up to 210 K. In this work, the observed AHE is believed to be further direct evidence demonstrating that the Mn-doped ZnO thin films are ferromagnetic.

show abstract

Weak localization effects in ZnO surface wells

Cited by 31 publications

References 31 publications

Quantum corrections to low temperature electrical conductivity in Dy doped ZnO thin films

Quantum corrections to low temperature electrical conductivity in Dy doped ZnO thin films

Challenges and opportunities of ZnO-related single crystalline heterostructures

Room-temperature ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition

Contact Info

Product

Resources

About