The development of pressure sensors that are effective over a broad range of pressures is crucial for the future development of electronic skin applicable to the detection of a wide pressure range from acoustic wave to dynamic human motion. Here, we present flexible capacitive pressure sensors that incorporate micropatterned pyramidal ionic gels to enable ultrasensitive pressure detection. Our devices show superior pressure-sensing performance, with a broad sensing range from a few pascals up to 50 kPa, with fast response times of <20 ms and a low operating voltage of 0.25 V. Since high-dielectric-constant ionic gels were employed as constituent sensing materials, an unprecedented sensitivity of 41 kPa in the low-pressure regime of <400 Pa could be realized in the context of a metal-insulator-metal platform. This broad-range capacitive pressure sensor allows for the efficient detection of pressure from a variety of sources, including sound waves, a lightweight object, jugular venous pulses, radial artery pulses, and human finger touch. This platform offers a simple, robust approach to low-cost, scalable device design, enabling practical applications of electronic skin.

Lithography techniques are currently being developed to fabricate nanoscale components for integrated circuits, medical diagnostics and optoelectronics. In conventional far-field optical lithography, lateral feature resolution is diffraction-limited. Approaches that overcome the diffraction limit have been developed, but these are difficult to implement or they preclude arbitrary pattern formation. Techniques based on near-field scanning optical microscopy can overcome the diffraction limit, but they suffer from inherently low throughput and restricted scan areas. Highly parallel two-dimensional, silicon-based, near-field scanning optical microscopy aperture arrays have been fabricated, but aligning a non-deformable aperture array to a large-area substrate with near-field proximity remains challenging. However, recent advances in lithographies based on scanning probe microscopy have made use of transparent two-dimensional arrays of pyramid-shaped elastomeric tips (or 'pens') for large-area, high-throughput patterning of ink molecules. Here, we report a massively parallel scanning probe microscopy-based approach that can generate arbitrary patterns by passing 400-nm light through nanoscopic apertures at each tip in the array. The technique, termed beam pen lithography, can toggle between near- and far-field distances, allowing both sub-diffraction limit (100 nm) and larger features to be generated.

Integration of individual nanoparticles into desired spatial arrangements over large areas is a prerequisite for exploiting their unique electrical, optical, and chemical properties. However, positioning single sub-10-nm nanoparticles in a specific location individually on a substrate remains challenging. Herein we have developed a unique approach, termed scanning probe block copolymer lithography, which enables one to control the growth and position of individual nanoparticles in situ. This technique relies on either dip-pen nanolithography (DPN) or polymer pen lithography (PPL) to transfer phase-separating block copolymer inks in the form of 100 or more nanometer features on an underlying substrate. Reduction of the metal ions via plasma results in the high-yield formation of single crystal nanoparticles per block copolymer feature. Because the size of each feature controls the number of metal atoms within it, the DPN or PPL step can be used to control precisely the size of each nanocrystal down to 4.8 AE 0.2 nm.scanning probe lithography | block copolymer micelles | single particle synthesis | nanopatterning N anoparticles exhibit size-dependent photonic, electronic, and chemical properties that could lead to a new generation of catalysts and nanodevices, including single electron transistors, photonics, and biomedical sensors (1-3). In order to realize many of these targeted applications, researchers need ways of synthesizing monodisperse particles while controlling individual particle position on technologically relevant surfaces. The challenge of positioning or synthesizing single sub-10-nm nanoparticles in desired locations is difficult, if not impossible, via current techniques including conventional photolithography (4-7). Scanning probe-based methods such as dip-pen nanolithography (DPN) (8) and polymer pen lithography (PPL) (9) are particularly attractive because inked nanoscale tips can deliver material directly to desired locations on various substrates with high registration and sub-50-nm feature resolution (10). Here we report a unique approach, termed scanning probe block copolymer lithography (SPBCL), which enables one to control individual nanoparticle growth and position in situ by using DPN or PPL to pattern attoliter volumes of metal ions associated with block copolymers in a massively parallel manner over large areas. Reduction of the metal ions via plasma results in the high-yield formation of single crystal nanoparticles per block copolymer feature. Specifically, we demonstrate that pattern dimensions and metal ion concentration dictate the size of each nanoparticle, whose diameter can be controlled with remarkable precision down to 4.8 AE 0.2 nm.To begin, we identified a polymer with two essential properties. The material must transfer from a scanning probe tip to a surface of interest in a controllable way, and it must sequester metal ions which can be used subsequently to make nanoparticles. We evaluated the properties of poly(ethylene oxide)-b-poly(2-vinylpyridine) (PEO-b-P2VP) in thi...

A novel stress-induced method to grow semimetallic Bi nanowires along with an analysis of their transport properties is presented. Single crystalline Bi nanowires were found to grow on as-sputtered films after thermal annealing at 260-270 degrees C. This was facilitated by relaxation of stress between the film and the thermally oxidized Si substrate that originated from a mismatch of the thermal expansion. The diameter-tunable Bi nanowires can be produced by controlling the mean grain size of the film, which is dependent upon the thickness of the film. Four-terminal devices based on individual Bi nanowires were found to exhibit very large transverse and longitudinal ordinary magnetoresistance, indicating high-quality, single crystalline Bi nanowires. Unusual transport properties, including a mobility value of 76900 cm(2)/(V s) and a mean free path of 1.35 mum in a 120 nm Bi nanowire, were observed at room temperature.

Nanofabrication strategies are becoming increasingly expensive and equipment-intensive, and consequently less accessible to researchers. As an alternative, scanning probe lithography has become a popular means of preparing nanoscale structures, in part owing to its relatively low cost and high resolution, and a registration accuracy that exceeds most existing technologies. However, increasing the throughput of cantilever-based scanning probe systems while maintaining their resolution and registration advantages has from the outset been a significant challenge. Even with impressive recent advances in cantilever array design, such arrays tend to be highly specialized for a given application, expensive, and often difficult to implement. It is therefore difficult to imagine commercially viable production methods based on scanning probe systems that rely on conventional cantilevers. Here we describe a low-cost and scalable cantilever-free tip-based nanopatterning method that uses an array of hard silicon tips mounted onto an elastomeric backing. This method-which we term hard-tip, soft-spring lithography-overcomes the throughput problems of cantilever-based scanning probe systems and the resolution limits imposed by the use of elastomeric stamps and tips: it is capable of delivering materials or energy to a surface to create arbitrary patterns of features with sub-50-nm resolution over centimetre-scale areas. We argue that hard-tip, soft-spring lithography is a versatile nanolithography strategy that should be widely adopted by academic and industrial researchers for rapid prototyping applications.