The RF performance of deep-sub micron CMOS technologies was studied. Experimental data and a validated RF model have been used to evaluate trends in RF performance at bias conditions typical for RF design.

No abstract

normalTiN was deposited from the reactant gases TiCl4 , NH3 , and H2 , with Ar as a carrier gas. The depositions were carried out in a cold wall CVD reactor at a total deposition pressure of 20.0 Pa (150 mtorr). The deposition rate and film properties were studied as a function of the deposition temperature and the partial pressure of the reactant gases. A rate equation for normalTiN has been determined r=1.3×10−5exp)(−7500/T·PH20·PNH31.3·PTiCl4−0.5 No influence of H2 on the deposition rate and film composition was detected. Even without H2 , deposition occurred in a gas mixture of TiCl4 , NH3 , and Ar. This suggests that H2 does not play a role in the normalTiN deposition reaction mechanism. The reaction order for NH3 and TiCl4 can only be explained qualitatively because of the existence of a normalTiN deposition reaction and a parallel complex forming reaction in the gas phase. These two reactions take place simultaneously and competitively. The complex forming reactions in the gas phase influence the reactant partial pressures. Until now this influence has not been known quantitatively. Therefore, a detailed reaction mechanism of the normalTiN deposition could not be extracted from our results. An activation energy of 61 kJ/mol has been determined. At increasing deposition temperature and at higher values of the PNH3/PTiCl4 ratio, lower values of electrical resistivity were observed. This resistivity variation is found to be caused by the impurity content (Cl and O) in the normalTiN films, which varies with the process parameters.

This paper presents new insights into the mechanisms of gate depletion and boron penetration in deep submicron CMOS technologies. MOSFET matching measurements show that these effects are stochastic in nature, and are associated with the gate poly-Si grain size distribution. Moreover, this work demonstrates that these effects can strongly degrade transistor matching performance of future CMOS generations.