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The in‐pile irradiation enhanced diffusion of gold and zinc at 400 °K in n‐type silicon has been investigated and the following diffusion coefficients for these impurities are determined: 1.5 × 10−11 and 2.2 × 10−12 cm2/s, respectively, by irradiation with a thermal neutron flux density of 1.8 × 1013 cm−2 s−1. It has been established that diffusion occurs according to a dissociative mechanism. γ‐radiation plays a decisive part in enhancing the diffusion of these impurities. The neutron component of the in‐pile radiation which is very efficient in generating Frenkel defects retards the gold and zinc diffusion.

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