Interstitial mechanism of the low-temperature gold migration in silicon

Kaneev, M. A.; Koifman, A. I.; Niyazova, O. R.

doi:10.1002/pssa.2210180154

Cited by 6 publications

(2 citation statements)

References 3 publications

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“…It is known that gold in silicon can be introduced by low-temperature (77 to 400 OK) radiation enhanced diffusion (RED) (6, 7). The RED dependences were investigated in (6).…”

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confidence: 99%

“…In this connection it is interesting to investigate the effect of crys- tal imperfections on the gold RED in silicon. It is also important because the resistance of semiconductor materials and devices to irradiation is notably determined by the RED of impurities and their interaction with grown-in and radiation induced defects (7). W e attempted to investigate the dislocation density effect on the gold diffusion enhanced by reactor irradiation.…”

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confidence: 99%

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Influence of structure defects on the radiation enhanced gold diffusion in silicon

Koifman

Narkulov

Yunusov

1975

Phys. Stat. Sol. (a)

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In honour of Prof. D r . D r . h . c . P. GORLICH's 70th birthday The gold doping of silicon i s in common use in semiconductor technology for the control of the lifetime of minority carriers. This causes the necessity of searching for and investigating the possible gold doping methods. One of these is the thermal gold diffusion (1, 2). Recently more data become available, indicating the effect of dislocations, grain boundaries etc. on the gold thermal diffusion rate ( 3 to 5). Lambert (3), for example, has obtained the relation kt 0 . 5 (C / c ' ) = (1e , s s I S Swhere C i s the gold concentration incorporated in silicon, C the maximum gold solubility in silicon at this temperature, k the rate factor, and t the diffusion time.The value of k was found to depend on the grow-in dislocation density. It is quite natural since gold migrates in silicon via interstitials and is captured recurrently by vacancies, which a r e injected by dislocations moving during the diffusion annealing.Kastner and Hesse (5) have observed that dislocations within the density range 8 -2 up to 10 cm If silicon samples with introduced dislocations have been annealed at 500 C an increase of the gold solubility with dislocation density was observed. The authors of (5) explained this effect by assuming a production of dislocations complexes, which inject excess vacancies during the diffusion process.introduced by plastic deformation did not influence the gold solubility. 0 It is known that gold in silicon can be introduced by low-temperature (77 to 400 OK) radiation enhanced diffusion (RED) (6, 7). The RED dependences were investigated in (6). In this connection it is interesting to investigate the effect of crys-

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“…It is known that gold in silicon can be introduced by low-temperature (77 to 400 OK) radiation enhanced diffusion (RED) (6, 7). The RED dependences were investigated in (6).…”

mentioning

confidence: 99%

mentioning

confidence: 99%

Influence of structure defects on the radiation enhanced gold diffusion in silicon

Koifman

Narkulov

Yunusov

1975

Phys. Stat. Sol. (a)

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The subthreshold radiation effects in semiconductors

Вавилов

Kiv

Niyazova

1975

Phys. Stat. Sol. (a)

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Effects of radiation on gold diffusion in silicon

Cheng

Süli

Kowall

et al. 1976

Phys. Stat. Sol. (a)

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A systematic study is made of different possible types of enhanced diffusion of gold in silicon. In contradiction to several published results the experimental results show that illumination with light from 1 kW tungsten lamp and 250 W infrared lamp as well as irradiations with 15, 100 keV, and 1.5MeV electrons do not have any significant effect on diffusion of gold in silicon a t temperatures from 30 to 200 "C. These negative results do not exclude the existence of effects of radiation by means of producing defect, recoil, or ionization on diffusion of gold in silicon, but establish an upper limit on the effect. It is a180 found that lattice defects introduced by high temperature diffusion or by heat treatment in air can make gold penetrate into silicon a t low temperatures (200 to 400 "C).Es werden verschiedene Arten erhohter Diffusion von Gold in Silizium systematisch untersucht. Im Gegensatz zu mehreren veroffentlichten Ergebnissen zeigen die Experimente, daS Bestrahlung mit Licht einer 1 kW-Wolframlampe oder einer 250 W-Infrarotlampe, ebemo wie mit Elektronen einer Energie von 15, 100 keV oder

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Interstitial mechanism of the low-temperature gold migration in silicon

Cited by 6 publications

References 3 publications

Influence of structure defects on the radiation enhanced gold diffusion in silicon

Influence of structure defects on the radiation enhanced gold diffusion in silicon

The subthreshold radiation effects in semiconductors

Effects of radiation on gold diffusion in silicon

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