No abstract

A systematic study is made of different possible types of enhanced diffusion of gold in silicon. In contradiction to several published results the experimental results show that illumination with light from 1 kW tungsten lamp and 250 W infrared lamp as well as irradiations with 15, 100 keV, and 1.5MeV electrons do not have any significant effect on diffusion of gold in silicon a t temperatures from 30 to 200 "C. These negative results do not exclude the existence of effects of radiation by means of producing defect, recoil, or ionization on diffusion of gold in silicon, but establish an upper limit on the effect. It is a180 found that lattice defects introduced by high temperature diffusion or by heat treatment in air can make gold penetrate into silicon a t low temperatures (200 to 400 "C).Es werden verschiedene Arten erhohter Diffusion von Gold in Silizium systematisch untersucht. Im Gegensatz zu mehreren veroffentlichten Ergebnissen zeigen die Experimente, daS Bestrahlung mit Licht einer 1 kW-Wolframlampe oder einer 250 W-Infrarotlampe, ebemo wie mit Elektronen einer Energie von 15, 100 keV oder