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Abstract⎯We show possibility in principle to determine some parameters (density-of-states effective mass of different valleys, energy distances between valleys, energies of ionization of impurity levels split from different valleys) of the band structure in many-valley semiconductors, based on the experimental curve of temperature dependence of overall concentration of charge carriers.

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Abstract⎯A possibility of separate determination of concentrations of donors and acceptors in manyvalley semiconductors on the basis of temperature dependence of total concentration of charge carriers is shown. As distinct from a single-valley semiconductor, it is necessary to take into account that effective mass of density of states and effective ionization energy are not constant, but depend on temperature.