Investigation of thermoelectric parameters of solid solutions Pb1−xSnxTe〈Cd〉 and determination of their applications

Aroutiounian, V. M.; Vahanyan, A.I.; Baghiyan, E.M.; Yepremyan, A.O; Abrahamian, Yu. A.

doi:10.1016/j.mseb.2003.10.014

Cited by 5 publications

(3 citation statements)

References 10 publications

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“…Similar effects and at the same temperatures were noticed also for Pb 1−x Sn x Te solid solutions doped with Cd [3] and In [8], but as abrupt jumps of the electrical conductivity coefficient, explained as a result of the iso-structural phase transition.…”

Section: Description Of Crystal Growth Processsupporting

confidence: 78%

“…Recently the strong attention is given to the thermoelectric properties of semiconductor solid solutions on the basis of A IV B VI compounds with the aim to obtain materials with high values of figure-of-merit z [1][2][3][4].…”

Section: Introductionmentioning

confidence: 99%

“…There is information in the literature regarding investigation of solid solutions Pb 1−x Sn x Te doped with Cd [3] and In [5]. The purpose of this paper was investigating the thermoelectric properties of solid solution Pb 0.78 Sn 0.22 Te doped with Ge.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

On thermoelectric figure-of-merit of Pb0.78Sn0.22Te〈Ge〉 solid solution

Vahanyan

Aroutiounian

Baghiyan

et al. 2008

Journal of Alloys and Compounds

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Section: Description Of Crystal Growth Processsupporting

confidence: 78%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

On thermoelectric figure-of-merit of Pb0.78Sn0.22Te〈Ge〉 solid solution

Vahanyan

Aroutiounian

Baghiyan

et al. 2008

Journal of Alloys and Compounds

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Thermoelectric coefficient of the non-homogeneously doped p–n junctions made on Si and Pb0.8Sn0.2Te

Gasparyan

Aroutiounian

Abrahamian

et al. 2004

Sensors and Actuators A: Physical

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Inherent density of point defects in thermal tensile strained (100)Si∕SiO2 entities probed by electron spin resonance

Stesmans

Somers

Afanasʼev

et al. 2006

Applied Physics Letters

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An electron spin resonance analysis has been carried out of the intrinsic point defects in (100)Si∕SiO2 entities thermally grown at 800°C on biaxial tensile strained Si (s-Si). As compared to coprocessed standard (100)Si∕SiO2, a significant reduction (>50%) is observed in the inherent density of the trivalent Pb-type interface defects (Pb0,Pb1). With the Pb0’s established as detrimental fast interface traps, this result may adduce one more reason for the observed enhancement of device channel carrier mobility with increasing Si substrate tensile strain as well as reduction in 1∕f noise. The s-Si∕SiO2 interface exhibits a generally superior device grade quality.

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Investigation of thermoelectric parameters of solid solutions Pb1−xSnxTe〈Cd〉 and determination of their applications

Cited by 5 publications

References 10 publications

On thermoelectric figure-of-merit of Pb0.78Sn0.22Te〈Ge〉 solid solution

On thermoelectric figure-of-merit of Pb0.78Sn0.22Te〈Ge〉 solid solution

Thermoelectric coefficient of the non-homogeneously doped p–n junctions made on Si and Pb0.8Sn0.2Te

Inherent density of point defects in thermal tensile strained (100)Si∕SiO2 entities probed by electron spin resonance

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