Poly(vinylidene difluoride) (PVDF) films were irradiated by means of heavy ions (in the electronic stopping‐power range) and electrons. Both types of ionizing radiation induce in the polymer film ionizations and excitations, but swift heavy ions induce a huge density of excitations and ionizations along the ion path. Dose‐range goes from 0.3 to 40 MGy. Irradiations were performed with Kr ions in the presence of helium, hydrogen, deuterium, and oxygen. Fourier transform infrared (FTIR) transmission measurements show differences in the nature of the created defects. Triple bonds are characteristic of the Kr ion irradiation. Double bonds, isolated and conjugated, exist for both kinds of radiation, but concentrations are higher with the Kr radiation. The presence of oxygen during irradiation produces oxidization defects. Typical bands of hydroxyls and carbonyls can be seen, respectively, in the 3800‐3000 cm−1 zone and ca. 1850–1730 cm−1. The formation of conjugated double bonds is enhanced when the Kr irradiation is performed under an O2 atmosphere. © 1994 John Wiley & Sons, Inc.

Electron bombardment of thick pure SiO2 induces the buildup of a negative charge which can be observed through a ‘‘mirror’’ effect in a conventional Auger scanning microscope. A mechanism for the creation of this charge is proposed in terms of trapping of an electron in defects due to the irradiating beam. The influence of temperature is studied on amorphous and monocrystalline SiO2. The temperature dependence of the existence of high negative charge shows around 270 °C an anomalous effect which depends on the irradiation time. The role of electronic excitation to produce defects in silica is discussed.

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