Particle-in-cell simulation of an electron shock wave in a rapid rise time plasma immersion ion implantation process Phys. Plasmas 12, 043503 (2005); 10.1063/1.1872894Numerical simulation of metal plasma-immersion ion implantation and deposition on a cone Simulation of sheath dynamics and current nonuniformity in plasma-immersion ion implantation of a patterned surface In plasma immersion ion implantation, the dependencies of sheath expansion and ion flux density on substrate geometry are well established. However, effects of extreme diameter variations have not been investigated explicitly. Using an analytical simulation code assuming an infinite mean free path, the sheath expansion, ion flux density, and resulting substrate temperature are explored down to wire diameters of 150 m. Comparing the results for planar substrates and cylindrical, thin wires, a reduction in the sheath width up to a factor of 10, a faster establishing of a new equilibrium sheath position, and an increase in the ion fluence by a factor of 100 is encountered. The smaller plasma sheath allows for a denser packing of wires during the treatment than for planar substrates. Additionally, the implantation time is reduced, allowing a fast wire transport through the chamber, further increasing the throughput.

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There is an increasing concern that high power impulse magnetron sputtering (HiPIMS) systems are being disadvantaged by relatively low deposition rates compared with traditional dc magnetrons operating at the same average power input. Nevertheless, a minimization of the losses of ionized and neutral species is possible in HiPIMS discharges. In the described magnetron configuration, the majority of metal ions escaping the discharge volume can be either used for deposition or, if they fail to reach the substrate, for discharge maintenance when charge redistribution from one ionization area to the other takes place. The anode-to-cathode configuration allows the neutrals, which are not deposited on the substrate, to be guided to the other instantaneous cathode and be ionized or re-sputtered. For the same average power input, it becomes possible to increase the self-sputtering efficiency, deposition rate and obtain a versatile control over the film microstructure.