2010
DOI: 10.1063/1.3485812
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Simulated plasma immersion ion implantation processing of thin wires

Abstract: Particle-in-cell simulation of an electron shock wave in a rapid rise time plasma immersion ion implantation process Phys. Plasmas 12, 043503 (2005); 10.1063/1.1872894Numerical simulation of metal plasma-immersion ion implantation and deposition on a cone Simulation of sheath dynamics and current nonuniformity in plasma-immersion ion implantation of a patterned surface In plasma immersion ion implantation, the dependencies of sheath expansion and ion flux density on substrate geometry are well established. How… Show more

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Cited by 2 publications
(3 citation statements)
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“…Plasma sheath expansions of electrodes subjected to negative high-voltage have been studied in various electrode configurations [1,2,[4][5][6][7][8][9][10][11][12][13][14][15][16][17] for basic plasma science research and industrial plasma applications. For the one-dimensional (1D) configurations, analytic models have been well established for sheath expansions.…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…Plasma sheath expansions of electrodes subjected to negative high-voltage have been studied in various electrode configurations [1,2,[4][5][6][7][8][9][10][11][12][13][14][15][16][17] for basic plasma science research and industrial plasma applications. For the one-dimensional (1D) configurations, analytic models have been well established for sheath expansions.…”
Section: Introductionmentioning
confidence: 99%
“…Scheuer developed a model for the case of fast sheath expansion and applied the model to 1D planar, cylindrical, and spherical electrodes [2]. These models were modified and improved by many researchers [4,5] and are used in recent research [6,7]. Two-dimensional (2D) or three-dimensional (3D) electrode configurations have also been investigated [11][12][13][14][15][16][17], but the methods of approach are different from those used for 1D configurations.…”
Section: Introductionmentioning
confidence: 99%
“…The study of sheath formation at the boundary of the plasma is of great practical importance. In plasma immersion ion implantation (PIII) (Mändl et al 1997;Sheridan et al 1998;Zeng et al 1999;Qi et al 2000;Bilek 2001;Yukimura 2001;Mukherjee et al 2002;Kwok et al 2003;Lacoste and Pelletier 2003;Masamune and Yukimura 2003;Ma et al 2003;Rauschenbach and Mändl 2003;Tian et al 2004Tian et al , 2005Tian et al , 2009Meige et al 2005;Sakudo et al 2006;Ghomi et al 2007Ghomi et al , 2009Huang et al 2007;Li and Wang 2007;Mukherjee et al 2007;Ghomi and Ghasemkhani 2009;Lejars et al 2010;Li et al 2010Li et al , 2012Zhu et al 2011), a plasmacontaining species to be implanted into a substrate is generated by an external plasma source or by the negative bias applied to the substrate (Conrad et al 1987;Meige et al 2005). After the negative bias is applied, electrons are repelled away from the surface leaving heavy ions forming an ion matrix sheath.…”
Section: Introductionmentioning
confidence: 99%