A GaAs broadband, dual-channel high-efficiency power amplifier MMlC is presented in this paper. The average performance for a single channel of the power amplifier is 18.0 dB small-signal gain, 16% power-added efficiency, and 2 dB compressed output power of 29.4 dBm from 6 to 18 GHz at 25°C. The two channels combined off chip achieve 32 dBm average output power. This 0.5 pm ion-implanted MESFET amplifier MMlC has been demonstrated in volume production with 154 wafer starts over 3 months resulting in a 30% total yield through fixtured RF test.

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A novel technique has been developed that utilizes the automated RF probe operation as a means to statistically verify and demonstrate the uniformity of a 0.5um ion-implanted MESFET wafer fab at Texas Instruments. Over seventythousand MMlCs have been characterized in a 6 month span to provide a healthy statistical database. Analysis of the database shows both the GaAs process and automated measurement technology to be robust and yield uniform device performance. Therefore, verifying that RF probe technique generates both cost and cycle time reduction plus quantifies device performance. The incorporation of this technique is consistent with TI'S ongoing thrust to continually improve its moderate-volume GaAs wafer fab process. Summary :Introduction :