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The sign of the surface charge and its effect on the magnitude of the magnitude of the photo‐response are investigated for high‐ohmic inorganic and organic semiconductors by using Bergmann und Kelvin condensers. An explanation is given of the origin and polarity of the photo‐response, and the changes in its spectral distribution. The results indicate the reliability of condenser methods for determining the sign of photo‐excited carriers in the absorption band of a semiconductor. The spectral phenomena occurring at the band edge can successfully be used to study the surface states of the semiconductor.

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