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The application of poly Si super thin film transistors to VLSI technology, in which the active layer poly Si is 200-5OOA thick, has been investigated. The average grain size,of poly Si increased to more than lpm from 200-300A by solid phase recrystallization. Sub-um poly Si super thin film transistors and 19-stage CMOS ring oscillators were fabricated on 5inch insulator substrates. The mobility was about 100cm'/V.s for an N-channel and about 80cm2/V's for a P-channel transistor. The leakage current of transistors was O.lpA/um. The threshold voltage was 0.8V for an N-channel and -0.8V for a P-channel transistor, respectively. ,150~s of the delay time per stage and 0.15pJlgate 'of power-delay product at VDD=5V were obtained in the ring oscillator.

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