We have developed a manufacturing friendly process for CIS solar cells that includes all-solid-state processing and an inert gas, atmospheric pressure selenization/anneal. Present efficiencies are in the 9 -10% range with V, 's at 400 + mV. Correlations between processing and performance have been established. Recent V, 's have been advanced to 430 mV using an etching process. These results combined with insights provided by a recombination model indicate that V, 's in excess of 500 mV are within reach.

This technical report is being transmitted in advance of DOE patent clearance, and no further dissemination or publication should be made of this report without prior approval of the DOE patent counsel. This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States nor any agency thereof, nor any of their employees, makes any warranty, expressed or implied, or assumes any legal liability of responsibility for any third party's use of the results or use of any information, apparatus, product, or process disclosed in this report, or represents that its use by such third party would not infringe privately owned rights. Matrix of J , , and V , values showing comparisons between ZnO/CIS and ZnO/CdS/CIS device structures as a function of CdS dip time. Atomic size and electronegativity for Cu, In and Se. iV Document Control 1. NREL Report No. 2. NTlS Accession No.

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