We have designed an automatic complex equipped by a Cascade Microtech MPS150 micro-probing station and a PXIe-4143 source measure unit from National Instruments Corporation to investigate the electrical properties of metal/insulator/metal sandwich structures. We have also succeeded in implementing conditions for the current-voltage characteristics measurements and in simulating procedures for the multiple reading/writing of digital information by means of resistive switching inside the nanostructured layers. We have studied anodized-titanium-dioxide-based Ti/TiO2-NT/Au structures with diameter of 100 micrometers, synthesized by the mask method. For the micromemristors produced, we have estimated the resistance in the low-(<10 kOhm) and high-ohmic (> 50 kOhm) states.

Self-ordered nanotubular titania TiO2-NT with outer tube diameter of 45 nm are synthesized using the anodic oxidation of titanium foil. Four sets of memristors with 100 m diameter based on Ti/TiO2-NT/Au sandwich structures with an oxide layer thickness of 80, 120, 160 and 200 nm are fabricated. Current-voltage (CV) characteristics for the obtained samples in the static and dynamic operation modes are studied. Resistance in high and low resistance states is estimated. Basing on the analysis of the CV characteristics in dynamic mode (> 14 000 switchings) a prospective of use for synthesized Ti/TiO2-NT/Au micromemristors with oxide layer thickness of 160 nm in nonvolatile memory is shown.

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