The influence of γ (E = 1.25 MeV, maximal dose 107 Gy), electrons (E = 1.3 MeV, maximal dose 107 Gy, and E = 3.5 MeV, maximal dose 2 × 108 Gy), and reactor neutrons (maximal fluence 1017 cm−2) irradiation on the optical and electrophysical properties of Gd3Ga5O12 single crystals is investigated. The role of impurity ions in the radiation stimulated processes is briefly discussed. The irradiation regimes are established, leading to the processes of ionizing recharging of genetic defects and defect creation by impact displacement, changing the properties of Gd3Ga5O12. Experimental data and theoretical estimations of radiation defect concentration are compared.

A decrease in the critical current density Jc of a YBa2Cu3O7−x thin film is observed after its irradiation by 4-MeV electrons. It is shown that the temperature dependence of Jc agrees with the idea of a granular structure of the film, with intergranular contacts of the superconductor–metal–insulator–superconductor type.

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