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A 2.5 Watt average power (15 Watt peak power) amplifier for application with WiMAX signal protocols has been constructed using small surface-mount GaN HEMT transistors. The GaN HEMT characteristics are uniquely suitable for producing high peak power in very small (3X3 mm) surfacemount packages. The PA produces 12.5 dB of gain over 3.3-3.9 GHz, with EVM under 2.5% with 2.5 Watts average output. A design methodology for optimizing performance for the WiMAX protocol is presented.

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