Thermal analysis and its application to high power GaN HEMT amplifiers

Improved thermal management for GaN power electronics: Silver diamond composite packages

“…Good agreement between simulation and experimental data was achieved using a die-attach thermal conductivity of 40 W/(m K). This value is within the range of solder thermal conductivity (20-60 W/(m K)) that can be found in literature [16][17][18][19], with the difference that our value was extracted using Raman thermography which is more accurate than the often used electrical method to determine device temperature which does not measure peak device temperature [20]. Therefore, it is worthwhile to take advantage from this accurately validated model to extract the temperature drop in each layer and their contribution to the overall thermal resistance of the packaged device.…”

A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

“…It should be possible in theory to compare the data obtained by IR thermography to a device thermal simulation, considering all the factors previously described. Attempts have been made to do this [20], although whether this approach can be used to accurately determine the peak temperature in all devices is controversial, particularly in devices with very high local temperature gradients such as GaN RF HEMTs. Although peak temperature accuracy may be limited by spatial averaging in IR thermography, it is a very efficient method for mapping the temperature over large surface areas, making this technique especially suitable for comparative screening of identical devices where exact knowledge of peak temperatures may not be essential.…”

Efficient physical-thermal model for thermal effects in AlGaN/GaN high electron mobility transistors

“…[6][7][8] However, these high densities involve an important self-heating leading to significant operating temperatures and thus reducing the performance and reliability of the device. Previous studies on thermal effect analysis based on Monte-Carlo model, 9 pure thermal analysis, 10 or drift diffusion thermal model 11 have already been published. Though the first one is very accurate, it needs very long central processing unit (CPU) times and is consequently not fully suitable for the topology design of a component.…”