In this paper, we report on the performance of the SwissQuantum quantum key distribution (QKD) network. The network was installed in the Geneva metropolitan area and run for more than one and a half years, from the end of March 2009 to the beginning of January 2011. The main goal of this experiment was to test the reliability of the quantum layer over a long period of time in a production environment. A key management layer has been developed to manage the key between the three nodes of the network. This QKD-secure network was used by end-users through an application layer.PACS numbers: 03.67.Dd, 03.67.Hk, ‡ D Stucki and M Legré contributed equivalently to the writing of this paper.

Abstract-The design and characterization of an imaging system is presented for depth information capture of arbitrary three-dimensional (3-D) objects. The core of the system is an array of 32 32 rangefinding pixels that independently measure the time-of-flight of a ray of light as it is reflected back from the objects in a scene. A single cone of pulsed laser light illuminates the scene, thus no complex mechanical scanning or expensive optical equipment are needed. Millimetric depth accuracies can be reached thanks to the rangefinder's optical detectors that enable picosecond time discrimination. The detectors, based on a single photon avalanche diode operating in Geiger mode, utilize avalanche multiplication to enhance light detection. On-pixel high-speed electrical amplification can therefore be eliminated, thus greatly simplifying the array and potentially reducing its power dissipation. Optical power requirements on the light source can also be significantly relaxed, due to the array's sensitivity to single photon events. A number of standard performance measurements, conducted on the imager, are discussed in the paper. The 3-D imaging system was also tested on real 3-D subjects, including human facial models, demonstrating the suitability of the approach.

In this article, a fully integrated single photon detector including a silicon avalanche photodiode and a quenching circuit is presented. The low doping concentrations, inherent to the complementary metal–oxide–semiconductor (CMOS) high-voltage technology used, favor the absorption of red and infrared photons at the depletion region. The detection probability rapidly increases with excess bias voltages up to 5 V. At this value, the detection probability is larger than 20% between 420 nm and 620 nm and still 7% at 750 nm. The photosensitive area is 7 μm in diameter. Cointegration of the diode and the quenching resistor allows a drastic reduction of parasitic capacitances. Though passively quenched, the single photon detector exhibits a dead time as low as 75 ns. The avalanche current is quickly quenched in less than 3.5 ns leading to a relatively low afterpulsing probability of 7.5% at 5 V excess bias voltage. The afterpulses are located in the first microseconds after the avalanche event. At room temperature, the dark count rate is about 900 Hz at 5 V excess bias voltage. Cooling of the sensor below 0 °C is of minor interest since the tunneling process becomes dominant. A remarkably short timing resolution has been obtained with values lower than 50 ps for excess bias voltage higher than 5 V. The industrial CMOS high-voltage technology used guarantees low production costs. In applications where the light can be focused on the small photosensitive area using a high magnification objective, the fabricated single photon avalanche photodiode overcomes the features of standard photomultiplier tubes. The CMOS integration opens the way to the fabrication of an extremely compact array. The design can be easily fitted to a dedicated application. Furthermore, by using an industrial CMOS process, the cointegration of data processing electronics to produce a smart sensor would be a feasible task.

No abstract

We demonstrate fast counting and multiphoton detection abilities of a Silicon Photo Multiplier (SiPM). In fast counting mode we are able to detect two consecutive photons separated by only 2.3 ns corresponding to 430 MHz. The counting efficiency for small optical intensities at lambda= 532 nm was found to be around 16% with a dark count rate of 52 kHz at T= -5 masculine C. Using the SiPM in multiphoton detection mode, we find a good signal discrimination for different numbers of simultaneously detected photons.