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Thin Hf0.6Si0.4Ox and Hf0.3Al0.7Ox films fabricated by metal-organic chemical-vapor deposition and atomic-layer-deposition techniques were characterized using monoenergetic positron beams. Measurements of the Doppler broadening spectra of annihilation radiation and the lifetime spectra of positions indicated that positrons annihilated from the trapped state by open volumes that exist intrinsically in amorphous structures of the films. For HfSiOx, the mean size of the open volumes and their size distribution decreased with increasing postdeposition annealing (PDA) temperature. For HfAlOx, although the overall behavior of the open volumes in response to annealing was similar to that for HfSiOx, PDA caused a separation of the mean size of the open volumes. When this separation occurred, the value of the line-shape parameter S increased, suggesting an oxygen deficiency in the amorphous matrix. This fragmentation of the amorphous matrix can be suppressed by decreasing the annealing time.

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The first direct measurements of the spin-dependent positron-electron momentum density and Fermi surface of Ho are presented. The measurements were performed using two-dimensional angular correlation of annihilation radiation (ACAR) experiments with reversal magnetic field directions parallel and antiparallel to the polarization direction of the positron. The analysis confirmed that two hybrid bands influence the Fermi surface of Ho. They are 5d -6s conduction hybrid bands and partial hybridization of 4f -5d bands. In fact, the measured Fermi surface revealed the behavior of the magnetic electrons. Further, the reciprocal lattice points revealed the electronic spin density distribution behavior. The general layout of the Fermi surface of Ho showed a multiply connected surface as an open hole running along the ΓA axis with minority spin distribution and two electron surfaces centered on K and H points, respectively. Furthermore, this Fermi surface showed anti-ferromagnetic character. The measured Fermi surface of Ho showed agreement with the results of a previous band structure calculation method.