Ternary compound semiconductor CuInSeS film has been deposited spray pyrolytically using aqueous solution containing CuCl2, InCl2, (H2NCSNH2) and SeO2. Structural characterization of the deposited film has been carried out using X-ray diffraction technique. The chalcopyrite structure of the film was confirmed with 112 preferred orientations. The films were polycrystalline. The resistivity of the film was measured for temperature ranging from 77 K to 473 K. The activation energy values were calculated from the Arrhenius plot. In the low temperature region conduction takes place through variable range hopping mechanism. The Hall mobility and carrier concentration at room temperature were calculated using the Van der Pauw-Hall method.