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COMMUNICATIONSThe Communications section is for short contributions which are not of such urgency as to justify publication in Applied Physics Letters and are not appropriate for regular Articles. They should not generally exceed in length five double-spaced typewritten pages or three printed columns including allowances for illustrations. references. and tables. Communications shoulds be reasonably self-contained and not mere announcements of proposed research or of more comprehensive studies to be published later. Substantive comments or addenda to previously published articles may possibly fit these criteria. Manuscripts intended for this section should be accompanied by a brief abstract for information-retrieval purposes. Accepted manuscripts will follow the same publication schedule as articles in this journal. and galleys will be sent to authors.The forward current-voltage (IrV f ) characteristics of (50 wt% Ni-50 wt% Pt) silicide Schottky diodes, formed in vacuum at 425°C from rf sputter-deposited Ni and Pt thin films, were found to be dependent on the metal-deposition sequence. From the thermionic emission equation an empirical barrier height of 0.70 e V was calculated for diodes formed from 125 A. Pt/325 A. Ni/(111) Si, while diodes formed from 325 A. Ni/125A. Pt/(III) Si had an empirical barrier height of 0.65 e V. The deposition of a thin W -Ti diffusion marker film on the Si surface before sput,ter deposit,ion ofNi and Pt layers modified Ir Vfcharacteristics. Silicide diodes formed from 125 A Pt/325 A Ni/(W-Ti)/(11I) Si had an empirical barrier height of 0.66 eV. Diodes formed from 325 A. Ni/125 A. Pt/(W-Ti)/(I11) Si had an empirical barrier height of 0.70 eV. MeV 4He + backscattering spectra revealed that diodes with similar Ir V f characteristics had similar Ni and Pt concentration profiles in the silicide film.

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