We study the current and charge distribution in a two dimensional electron system, under the conditions of the integer quantized Hall effect, on the basis of a quasi-local transport model, that includes non-linear screening effects on the conductivity via the self-consistently calculated density profile. The existence of "incompressible strips" with integer Landau level filling factor is investigated within a Hartree-type approximation, and non-local effects on the conductivity along those strips are simulated by a suitable averaging procedure. This allows us to calculate the Hall and the longitudinal resistance as continuous functions of the magnetic field B, with plateaus of finite widths and the well-known, exactly quantized values. We emphasize the close relation between these plateaus and the existence of incompressible strips, and we show that for B values within these plateaus the potential variation across the Hall bar is very different from that for B values between adjacent plateaus, in agreement with recent experiments.

We examine within the self-consistent Thomas-Fermi-Poisson approach the low-temperature screening properties of a two-dimensional electron gas (2DEG) subjected to strong perpendicular magnetic fields. Numerical results for the unconfined 2DEG are compared with those for a simplified Hall bar geometry realized by two different confinement models. It is shown that in the strongly non-linear screening limit of zero temperature the total variation of the screened potential is related by simple analytical expressions to the amplitude of an applied harmonic modulation potential and to the strength of the magnetic field.

The electron and current-density distributions in the close proximity of quantum point contacts ͑QPCs͒ are investigated. A three-dimensional Poisson equation is solved self-consistently to obtain the electron density and potential profile in the absence of an external magnetic field for gate and etching defined devices. We observe the surface charges and their apparent effect on the confinement potential, when considering the ͑deeply͒ etched QPCs. In the presence of an external magnetic field, we investigate the formation of the incompressible strips and their influence on the current distribution both in the linear response and out of linear response regime. A spatial asymmetry of the current carrying incompressible strips, induced by the large source drain voltages, is reported for such devices in the nonlinear regime.

In this work we implement the self-consistent Thomas-Fermi-Poisson approach to a homogeneous twodimensional electron system. We compute the electrostatic potential produced inside a semiconductor structure by a quantum point contact ͑QPC͒ placed at the surface of the semiconductor and biased with appropriate voltages. The model is based on a semianalytical solution of the Laplace equation. Starting from the calculated confining potential, the self-consistent ͑screened͒ potential and the electron densities are calculated for finite temperature and magnetic field. We observe that there are mainly three characteristic rearrangements of the incompressible edge states which will determine the current distribution near a QPC.

We present a systematical experimental investigation of an unusual transport phenomenon observed in two dimensional electron gases in Si/SiGe heterostructures under integer quantum Hall effect (IQHE) conditions. This phenomenon emerges under specific experimental conditions and in different material systems. It is commonly referred to as Hall resistance overshoot, however, lacks a consistent explanation so far. Based on our experimental findings we are able to develop a model that accounts for all of our observations in the framework of a screening theory for the IQHE. Within this model the origin of the overshoot is attributed to a transport regime where current is confined to co-existing evanescent incompressible strips of different filling factors.