This paper focuses on designing a simple yet efficient H ∞ controller for regulating the voltage/frequency, output current, and active/reactive power-sharing in a microgrid (MG). The purpose of designing the robust H ∞ controller is to regulate the frequency and voltage in face of the uncertainties in the microgrid and load variation. The studied DC MG test bed includes an SMPS (switching-mode power supply) and DC-DC converter, necessary sensor and data acquisition systems. The proposed control scheme is simulated using MATLAB/Simulink and is then verified in real-time using LabVIEW. The control scheme is developed in the LabVIEW software’s block diagram panel of the virtual instrumentation interface. From both simulation and LabVIEW implementation, load sharing among the DGs, and voltage and frequency regulation at the nominal values are achieved by employing the proposed H ∞ controller. The robustness of the proposed controller is evaluated by comparing it with a robust observer-based controller (Zarei A, Mousavi Y, Mosalanezhad R, Atazadegan MH. Robust voltage control in inverter-interfaced microgrids under plug-and-play functionalities. IEEE Syst J 2020;14:2813–24) under balanced, unbalanced, and non-linear loads. The comparison results envisage that the proposed controller provides improved voltage/frequency regulation and power-sharing during disturbances including the addition of non-linear load to the MG system.

<p>In this study, ferroelectric field-effect-transistors (FeFETs) with nitride (SiON) interface having various gate lengths (LG) and gate widths (WG) were investigated to study the influence of gate dimensions on the memory window (MW) and endurance characteristics of the FeFETs. The experimental results show the MW of FeFET increases with decreasing LG and increasing of WG due to the increased fringe effect of the metal gate electrode from parasitic fringing capacitance. Thus, in the design of FeFET, fringe effect must be considered carefully. However, no considerable impact was observed on endurance characteristics of the FeFETs as the gate dimensions were varied.</p>

No abstract

<p>In this study, ferroelectric field-effect-transistors (FeFETs) with nitride (SiON) interface having various gate lengths (LG) and gate widths (WG) were investigated to study the influence of gate dimensions on the memory window (MW) and endurance characteristics of the FeFETs. The experimental results show the MW of FeFET increases with decreasing LG and increasing of WG due to the increased fringe effect of the metal gate electrode from parasitic fringing capacitance. Thus, in the design of FeFET, fringe effect must be considered carefully. However, no considerable impact was observed on endurance characteristics of the FeFETs as the gate dimensions were varied.</p>