We report on a nanomachined electromechanical resonator applied as a mechanically flexible tunneling contact. The resonator was machined out of a single-crystal silicon-on-insulator substrate and operates at room temperature with frequencies up to some 73 MHz, transferring electrons by mechanical motion.

We present measurements on nanomechanical resonators machined from Silicon-on-Insulator substrates. The resonators are designed as freely suspended Au/Si beams of lengths on the order of 1 -4 µm and a thickness of 200 nm. The beams are driven into nonlinear response by an applied modula-

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Nanoporous ultrananocrystalline diamond membranes J. Vac. Sci. Technol. B 28, C6P42 (2010); 10.1116/1.3501345 3D structuring of multilayer suspended membranes including 2D photonic crystal structures Silicon nanostructures fabricated by scanning probe oxidation and tetra-methyl ammonium hydroxide etching Fabrication of gated cathode structures using an in situ grown vertically aligned carbon nanofiber as a field emission element

Using highly doped silicon-on-insulator (SOI) films, we demonstrate metallic Coulomb blockade in silicon nanowires at temperatures up to almost 100 K. We propose a process that leads to island formation inside the wire due to a combination of structural roughness and segregation effects during thermal oxidation. Hence, no narrowing of the SOI wire is necessary to form tunneling contacts to the single-electron transistors.