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C E A -D A M , s e r v i c e & l e c t r o n i q u e , B P -1 2 , F 9 1 6 8 O -B r u y l r e s -L c -C h 8 t e l , F r a n c e SO1 technologies have been refered as "of choice" for its inherent high radiation immunity l .Megarad-hard 16k-RAM has been demonstrated, using -5 V back-gate bias during radiation and testing 2 in the case of a silicon island simox technology.Even for zero back-gate bias, acceptable dose levels can be achieved 3. Much higher levels are under developments at the RCD level and complete characterization papers have been presented, in 1985' and 19885.It appeared that, in spite of its great interest in term of manufacturability and speed performances, SOIs have variable hardness limits. These limits come essentially from inherent parasitics elements, originating from the isolation means of the elementary transistor.These elements can be modeled, and their specific vulnerability domain can be described : parasitic buried HOS parasitic bipolar Dose Dose rate and SEU underlaying depleted layer SEU in substrateVarious experimental situations can be exposed, related to different case studies : -influence of MESA versus LOCOS lateral isolation -influence of SIHOX versus FIPOS buried isolation -influence of techniques aiming to "bipolar killing" -influence of substrate bias on dose and SEU phenomena -relationships between circuits scale factor and the hardness level -SO1 recovery data after dose exposure and "rebound" 114

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