The technical progress development contributes to the introduction of automated methods of management and control of the system state. The use of sensor equipment with the use of piezoelectric tensor-resistive modules allows to register fast variable and statistical pressure, respectively. Such assemblies possess not only the most reliable information content of the measured values, but also combine simple step-by-step manufacturing techniques.

The development of medical technology is an integral component of preserving the future generations health, which consists of the prevention and early diseases diagnosis using modern diagnostic measuring instruments. One such instrument is a bio-impedance analyzer (BIA). This article presents the results of modeling and metrological analysis of the BIA electrical circuit, which allowed to minimize the main relative error to 0.1%.

The results of the study of the technological regimes of the formation of a microcantilever beam of layered heterostructures based on the integration of smart material and silicon carbide are presented. Layers of silicon dioxide (SiO2), silicon nitride, silicon carbide, and platinum (lower electrode) are successfully formed on a silicon substrate. The results of an experimental study of the Pt / PZT / Pt / SiC heterostructures parameters confirmed the technological compatibility of the layers and the promise of using these structures in sensors of dynamic deformation when creating new generation sensors, including those operating in heavy rocket conditions of space technology.

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The phenomenon of dielectric fatigue of active dielectrics, which consists in a decrease in the residual polarization depending on the number of switching cycles, is researched. A model of the dependence of the residual polarization of ferroelectric materials on the number of switching cycles is proposed. The model is based on piecewise - linear approximation of the results of measurements of the hysteresis loops of thin films PbTiO3 at a temperature T = 470 (°C), the electric field strength E = 100 (kV/cm). The developed model was used in the development of a technique for studying dielectric fatigue, depending on different modes of material switching.