Low-dimensional heterostructures obtaining from an intelligent material and carbon material on a silicon

Abstract

The results of the study of the technological regimes of the formation of a microcantilever beam of layered heterostructures based on the integration of smart material and silicon carbide are presented. Layers of silicon dioxide (SiO2), silicon nitride, silicon carbide, and platinum (lower electrode) are successfully formed on a silicon substrate. The results of an experimental study of the Pt / PZT / Pt / SiC heterostructures parameters confirmed the technological compatibility of the layers and the promise of using these structures in sensors of dynamic deformation when creating new generation sensors, including those operating in heavy rocket conditions of space technology.

Multilayer thin-film resistive structures with temperature self-compensation for super-precision resistors and strain gauges

“…They have a high linearity of output characteristics and are distinguished by simplicity of design solutions. Analysis of the development trend of thin-film resistors showed their steady improvement and renewal [2,3]. New promising developments, as well as products with improved parameters, enter the market.…”