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We investigate the applicability of the two major approximations which are most commonly employed in the study of the quantum Rabi model, namely the description of a resonant cavity mode as a single-mode quantized field and the use of the rotating wave approximation. Starting from the Hamiltonian of a two-level system interacting with a multi-mode quantized field, we perform the canonical transformation of the field operators. This allows one to partition the Hamiltonian of the system into two parts. The first part is the interaction of the two-level system with a single collective field mode, while the second one describes the interaction with field fluctuations. The first part is usually associated with the resonant cavity mode. This division enables us to determine the applicability condition of the single-mode approximation. In addition we identify simple approximate relations for the description of the eigenstates, eigenfunctions and the time evolution of the quantum Rabi model beyond the rotating wave approximation.

The evolution of the atomic state population in a two-level system coupled to a single-mode quantum field is calculated in the analytical form. Essential characteristics of the "collapse-revival" effect are expressed in terms of the physical parameters of the system by means of simple formulas in both the resonant and the non-resonant cases. The obtained results are of great importance for the qualitative analysis of the phenomenon.

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The time evolution of the electron density and the resulting time dependence of Fourier components of the X-ray polarizability of a crystal irradiated by highly intense femtosecond pulses of an X-ray free-electron laser (XFEL) is investigated theoretically on the basis of rate equations for bound electrons and the Boltzmann equation for the kinetics of the unbound electron gas. The photoionization, Auger process, electron-impact ionization, electron-electron scattering and three-body recombination have been implemented in the system of rate equations. An algorithm for the numerical solution of the rate equations was simplified by incorporating analytical expressions for the cross sections of all the electron configurations in ions within the framework of the effective charge model. Using this approach, the time dependence of the inner shell populations during the time of XFEL pulse propagation through the crystal was evaluated for photon energies between 4 and 12 keV and a pulse width of 40 fs considering a flux of 10 12 photons pulse À1 (focusing on a spot size of $ 1 mm). This flux corresponds to a fluence ranging between 0.8 and 2.4 mJ mm À2. The time evolution of the X-ray polarizability caused by the change of the atomic scattering factor during the pulse propagation is numerically analyzed for the case of a silicon crystal. The time-integrated polarizability drops dramatically if the fluence of the X-ray pulse exceeds 1.6 mJ mm À2 .