The effect of preexcitation with light of band gap energy on deep trapping and thermal generation is examined in selenium and selenium-rich As-Se alloy films by time-of-flight and xerographic techniques. Results suggest that excess carrier trapping and dark carrier generation are controlled by deep defect centers whose population can temporarily be altered by photoexcitation. ~CCJIeAOBaHO BJlIIRHHe IlpeABapHTeJlbHOrO ,,30HHOrO'' OCBe~eHUII H a m y 6 o~~i i 3aXBaT II TePMIIYeCKYH) reHepaqHH) B CJIOIIX CeJIeHa B CJIOIIX COeAIIHeHB~ As-Se IlOCpeACTBOM A3MepeHEIII BpeMRIIpOneTHbIX II KCepOrpa@II9eCKIIX IIapaMeTpOB. Pe3yJIbTaTbI CBHAeTeJIbCTByIoT 0 TOM, YTO 3aXBaT HepaBHOBeCHbIX HOCHTeneii 3apma II TeMHOBaR TepMHYeCKaII RHepaWII KOHTpOJlHpyeTCR ~J I~~O K H M H Ae@eKTHbIMB QeHTpaMH, 3aCeJleHHOCTb KOTOPbIX H3MeHReTCR npH @OTOB036YXAeHHII.' ) The photodarkening in amorphous selenium at low temperatures was firstly analyzed by Averyanov et al. [9] and Tanaka and Odajima [lo].

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