Raman scattering measurements are reported for amorphous selenium. It is found that the molecular structure of a-Se on the scale of medium-range order differs from the structure of most inorganic glasses. A laser-induced glass-crystalline transition is also studied. The experimental results suggest the existence of successive phases in such transition with pronounced threshold behaviour.

The effect of preexcitation with light of band gap energy on deep trapping and thermal generation is examined in selenium and selenium-rich As-Se alloy films by time-of-flight and xerographic techniques. Results suggest that excess carrier trapping and dark carrier generation are controlled by deep defect centers whose population can temporarily be altered by photoexcitation. ~CCJIeAOBaHO BJlIIRHHe IlpeABapHTeJlbHOrO ,,30HHOrO'' OCBe~eHUII H a m y 6 o~~i i 3aXBaT II TePMIIYeCKYH) reHepaqHH) B CJIOIIX CeJIeHa B CJIOIIX COeAIIHeHB~ As-Se IlOCpeACTBOM A3MepeHEIII BpeMRIIpOneTHbIX II KCepOrpa@II9eCKIIX IIapaMeTpOB. Pe3yJIbTaTbI CBHAeTeJIbCTByIoT 0 TOM, YTO 3aXBaT HepaBHOBeCHbIX HOCHTeneii 3apma II TeMHOBaR TepMHYeCKaII RHepaWII KOHTpOJlHpyeTCR ~J I~~O K H M H Ae@eKTHbIMB QeHTpaMH, 3aCeJleHHOCTb KOTOPbIX H3MeHReTCR npH @OTOB036YXAeHHII.' ) The photodarkening in amorphous selenium at low temperatures was firstly analyzed by Averyanov et al. [9] and Tanaka and Odajima [lo].

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