No abstract

No abstract

This paper presents a temperature compensated logarithmic amplifier (log-amp) RF power detector implemented in CMOS 0.18 µm technology. The input power can range from -50 to +10 dBm for RF signals ranging from 100 MHz to 1.5 GHz. This design attains a typical DR of 39 dB for a ±1 dB logconformance error (LCE). Up to 900 MHz the temperature drift is never larger than ±1.1 dB for all 24 measured samples over a temperature range from -40 to +85 • C. The current consumption is 6.3 mA from a 1.8 V power supply and the chip area is 0.76 mm 2 .

The Smart Series Switch ("Triple-S") technique provides, for present and future deep-sub-micron technologies, in standby mode for 5 decades leakage-current reduction while retaining circuit states by using a two-transistor series switch with a smart combination of state and mode dependency and high and low thresholds.

No abstract