A fast decay emission peaking at 645 nm with a decay lifetime within the experimental resolution of 0.14 micros is observed in ZnS:Mn2+ nanoparticles. This short-lived signal is also observed in pure ZnS and MgS: Eu3+ nanoparticles, which has nothing to do with Mn(2+)-doped ions but is from the deep trap states of the host materials. The short-lived component decreases in intensity relative to the Mn2+ emission at higher excitation powers, while it increases in intensity at low temperatures and shifts to longer wavelengths at longer time delays. Our observations demonstrated further that the emission of Mn2+ in ZnS: Mn2+ nanoparticles behaves basically the same as in bulk ZnS: Mn2+; the fast decay component is actually from the intrinsic and defect-related emission in sulfide compounds.

Controlled growth of heterostructured nanowires and mechanisms of their formation have been actively studied during the last decades due to perspectives of their implementation. Here, we report on the self-catalyzed growth of axially heterostructured GaPN/GaP nanowires on Si(111) by plasma-assisted molecular beam epitaxy. Nanowire composition and structural properties were examined by means of Raman microspectroscopy and transmission electron microscopy. To study the optical properties of the synthesized nanoheterostructures, the nanowire array was embedded into the silicone rubber membrane and further released from the growth substrate. The reported approach allows us to study the nanowire optical properties avoiding the response from the parasitically grown island layer. Photoluminescence and Raman studies reveal different nitrogen content in nanowires and parasitic island layer. The effect is discussed in terms of the difference in vapor solid and vapor liquid solid growth mechanisms. Photoluminescence studies at low temperature (5K) demonstrate the transition to the quasi-direct gap in the nanowires typical for diluted nitrides with low N-content. The bright room temperature photoluminescent response demonstrates the potential application of nanowire/polymer matrix in flexible optoelectronic devices.

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