As the world of semiconductor is moving towards smaller and high-end applications, the quality of the bonding adhesion for wire bonding is very critical. Although aluminium has been the metallization of choice in integrated circuits, it can be easily oxidized during high temperature and pressure. On the other hand, Platinum metallization layer has high thermal coefficient resistance and inert to oxygen. This paper reports the correlation between surface roughness and the wettability in the form of contact angle for Platinum deposited wafer etched using Inductively Couple Plasma-Reactive Ion Etching (ICP-RIE). Surface roughness was measured using AFM while contact angle was obtained via droplet test. The results clearly suggested that both surface roughness and wettabily, calculated by its contact angle value has the same trend. Surface roughness is directly proportional to the contact angle. This indicates that surface roughness have great influence on the surface wettability. Therefore, the adhesion for wire bonding process on platinum metallization which can be used in high end applications can be controlled by its surface roughness and wettability.

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This paper presents the interaction relationships between Tetrafluoromethane (CF4) gas, Oxygen (O2) gas, and RF power in response to the surface roughness of an Aluminium deposited wafer after being etched using Reactive Ion Etching (RIE). The investigation was done using the three factors full factorial design of experiment (DOE). Analysis was done qualitatively by plotting the main interaction plots. The results suggest that strong interactions are present between CF4 and RF power, CF4 and O2, and also O2 and RF power due to the intersection of the graphs. This implies that all three factors have interaction between each other towards the surface roughness on the deposited Aluminium after RIE.

Reactive Ion Etch (RIE) has been an important process in the world of microelectronic fabrication. Focus of this preliminary study is on how RIE affects the grain size of aluminum film which is fabricated on substrates. RIE parameters are varied to obtain 16 different recipes which are done using Design of Experiment. Grain size of the samples is recorded for all 16 samples before and after RIE treatment. This produces results that can be compared to obtain the effect of RIE on the aluminum film. Results show that RIE affects the mean grain size of the aluminum film as it increases after RIE treatment.

This paper reports on the bond strength comparison between silicon and different glass based materials via anodic bonding approach. The three types of glass based surface used were silica, pyrex, and soda lime glass. Silicon will be placed on the positive terminal and glass based materials will be placed on the negative terminal. Experiments were carried out using an in-house designed anodic bonder and the bond strength were measured using a bond strength tester. The anodic bonding approach process was done in two sets which are before and after the cleaning process for each sample. For every set, there are three different bonding partners, which are silicon with silica, silicon with Pyrex, and silicon with soda lime glass. From the results, it can be seen that almost all samples showed higher bond strength after the cleaning process. Silicon with soda lime glass bonding shows the highest bond strength compared with other materials.