Infrared (IR) absorption spectra are investigated hydrogenated amorphous solid solution films a-Si1-xGex: H (x = 0 ÷ 1) plasma chemical vapor deposition at different partial pressures of hydrogen PH2. Defined force, oscillator, which essentially depend on PH2. It is shown that the hydrogen contained in films mostly in the forms of GeH, SiH. Using integrated acquisitions JW, determined the amount of hydrogen in the films. Film properties depend on the composition and level of hydrogenation. The number of hydrogen atoms in films, varied by changing the composition of the gas mixture. In the work measured IR absorption for films a-Si1-xGex: H, aGe: H and a-Si0,88Ge0, 12: h. based on films and a-Si: H and a-Si0,88 Ge0, 12: H fabricated three-layer solar cells with an area of item 1.3 cm 2 and efficiency equal to ~ 9.5%.

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Developed and analyzed two-barrier structures-silicon-based photodetectors with high sensitivity in the field of integrated short-range. We studied the effect of gamma radiation on the origin of the current mechanism in the structure as awhole, and in the Schottky barrier in the p-n-transitions separately. Also, studied the effect of radiation on the photoelectric and photoluminescence parameters of the two-barrier structure. Shown that two barrier structures can improve the photoelectric parameters of conventional detectors. The photo detector on the basis of silicon with the increased integrated sensitivity in short-wave area of a range is developed. Influence radiation scale on the mechanism of currents of both in structure like Schottky's barrier, and in р-п-transitions is investigated. It is shown that two-barrier structures allow to improve photo-electric parameters of traditional detectors. Investigated the impact of radiation on the photoelectric and photoluminescence parameters of two-barrier structures.

Developed a silicon-based photodetector with high sensitivity integrated in the short range. The influence of gamma radiation on the mechanism of current flow in the structure type Schottky barrier, and the p-n junctions. It is shown that the double-barrier structure can improve the photoelectric parameters of conventional detectors.