Developed and analyzed two-barrier structures-silicon-based photodetectors with high sensitivity in the field of integrated short-range. We studied the effect of gamma radiation on the origin of the current mechanism in the structure as awhole, and in the Schottky barrier in the p-n-transitions separately. Also, studied the effect of radiation on the photoelectric and photoluminescence parameters of the two-barrier structure. Shown that two barrier structures can improve the photoelectric parameters of conventional detectors. The photo detector on the basis of silicon with the increased integrated sensitivity in short-wave area of a range is developed. Influence radiation scale on the mechanism of currents of both in structure like Schottky's barrier, and in р-п-transitions is investigated. It is shown that two-barrier structures allow to improve photo-electric parameters of traditional detectors. Investigated the impact of radiation on the photoelectric and photoluminescence parameters of two-barrier structures.