Alumina silicate powder which is extracted from the obsolete spark plug NGK (insulator part as a filler) has been used to produce epoxy/alumina silicate composite. The dielectric behavior of the composite materials (epoxy resin-alumina silicate NGK) is analyzed as a function of the filler content, temperature and frequency. AC conductivity and impedance are also studied. The results show that the permittivity, dielectric loss and loss tangent for all composites increase with increasing alumina silicate NGK filler content.

The ferric oxide nanoparticles (Fe2O3) which are deposited at interface which is related to hole collecting buffer layer [poly(3,4-ethyl-enedioxythiophene): poly(styrene-sulfonate) (PEDOT: PSS)] as well as regioregular poly(3-hexyl-thiophene): Zinc oxide nanoparticles (P3HT): (ZnO) active layer have been considerable increasing the performance of solar cell. Also, the solar cell devices have been fabricated with a weight ratio of 1:0.7, 1:0.8, 1:0.9 and 1:1 of P3HT and ZnO, respectively. In addition, photo physical characteristics regarding such devices with different value of the weight ratio were examined. This work is indicating that the absorption spectrum related to blend will be broad with varying ratios that was extremely required for the devices of the organic solar cells. Furthermore, the film morphology was estimated via atomic force microscope (AFM). EQE (i.e. External quantum efficiency) and XRD patterns measures were achieved for the optimal device, while the improvement in the efficiency with regard to a device with 1:1 was more considerable compared to 1:0.90, 1:0.80 as well as 1:0.70 values of weight ratio of P3HT and ZnO. With different weight ratio values, a solar cell upon (1:1) provides PCE (i.e. Power Conversion Efficiency) of 4.1%, dissimilar to 3.92% for (1:0.9), 3.9% for (1:0.8) and 3:6% devices.

The dye-doped polymer is commonly used in the field of optoelectronics, given its effectiveness in optimising the device’s performance. This study is devoted to the synthesis and characterisation of Anchusa-Italica-doped Pentacene thin-film. Scanning electronic microscopy structural analysis, Fourier transform spectroscopy, and UV-visible transmittance spectra with a range of 300-900 nm were also carried out. The fundamental optical properties such as the absorption coefficient, optical energy gap, absorption and refractive indices were calculated based on the methods already used in the literature as Tauc’s relationship. The morphology of the samples indicated that dye structure was affected in the doped pentacene. The Fourier transform infrared technique (FT-IR) resulting spectrum of the doped samples also showed a significant absorption peak corresponding to C-H as an index of impurities. The calculated band-gap energy of the impurity sample was reduced and was the lowest compared to both the pure dye and polymer samples. The optical absorption and transmittance spectra revealed that it was positioned in the desirable ranges for optoelectronic applications. An anomaly in the absorption index was also observed through excitation of the resonance mode with transparent indication. This effect was deduced from the calculation of the refractive index. The results presented in this paper significantly contribute to the developments in the field of optoelectronic devices based on dye/polymer organic materials.

Solvent Vapor Annealing (SVA) followed by Post Thermal Annealing (SVA-PA) are demonstrated as attractive methods to anneal polymer blend films and represent a very useful process to control the morphology for high performance polymer solar cells (PSCs). It is found that compared with general annealing processes, the crystallinity of regioregular poly (3-hexylthiophene) (rr-P3HT) has enhanced by performing SVA-PA on freshly deposited films. In this work we have investigated thin film blend produced from P3HT and [6,6]-phenyl-C61 butyric acid methylester (PCBM) materials. This photoactive layer is sandwiched between an anode composed of indium tin oxide (ITO)/poly(3,4 ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) gold nanoparticles (AuNPs)  and Al as the cathode  layer. Atomic force microscopy (AFM) study reveals that the SVA annealed films exhibit smooth surface and homogenous conductivity distribution. Moreover, an enhanced light harvesting and increased crystallinity of P3HT in the active layer are observed by UV–vis absorption and X-ray diffraction (XRD). We have seen that thermal annealing significantly improves the optical absorption ability for all treatment. We have also the current density- voltage characteristics  and External quantum efficiency (EQE) of different thermal annealing.

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