We present an interferometric method to analyze transparent samples using complex fringes generated by a parallel phase shifting radial shear interferometer using two coupled interferometers. Parallel interferograms are generated using two interferometers: the first one generates the polarized base pattern, and the second system is used to generate parallel interferograms allowing the adjustment of the x − y positions of the parallel interferograms. To obtain the optical phase map, parallel phase shift is generated by collocating polarizing filters at the output of the system; the polarizers are placed at arbitrary angles since they do not require adjustment because of the phase-recovery algorithm. The optical phase was processed using a two-step algorithm based on a modified Gram–Schmidt orthogonalization method. Such an algorithm has the advantage of not being iterative and is robust to amplitude modulation. The proposed method reduces the number of captures needed in phase-shifting interferometry. We applied the developed system to examine static and dynamics phase objects.

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One of the problems encountered in the manufacture of microstructures (MEMS) is the presence of residual stress caused by high temperatures during the manufacturing process. Residual stress generates deformation (ε) in materials, which consists of fractional changes in their dimensions (linear, surface or volume). The application of amorphous materials in the manufacture of MEMS is carried out at a lower temperature than those used with Polysilicon, so it is an alternative to reduce residual stress. The objective of the work is to analyze the mechanical behavior of thin films of amorphous Silicon germanium (a-SiGe). The analysis is carried out through the behavior of springboard type resonant structures and using the simulation of the finite element method (FEM). The resonance frequency of a trampoline-type structure depends only on its geometric dimensions, its density, and its Young's modulus. The simulation results show that the behavior of the resonance frequency and the Young's Modulus of thin films of a-SiGe, placed on a trampoline-type structure changes linearly whit Germanium content.

In this research, it is presented a detailed study of the structural and thermoelectric properties of the pyrochlore zirconium Pr2Zr2O7 compound prepared by solid-state reaction (SSR) in air at ambient pressure. The synthesized sample was characterized using powder X-ray diffraction. The thermal stability of the thermoelectric compound (TE) Pr2Zr2O7 was tested by thermogravimetric analysis (TGA) and differential thermal analysis (DTA). Scanning electron microscopy shows that the crystal size varies between 0.69 and 2.81μm. Electrical conductivity (\sigma) of the sample calcined at 1400 °C presented values increase irregularly with the increasing temperature from 0.001 to 0.018 S cm-1 as expected in a semiconductor material. The thermal conductivity is lower than 0.44 - 775 W m-1 K-1 which is quite anomalous in comparison with the thermal conductivity of other oxides.