This article discusses a simple vacuum evaporation technique for deposition of CdTe thin films with different thicknesses (100, 200, 300, 400, and 500) nm on P-type silicon substrates. Then, V2O5 and SnO2 thin films were deposited as a buffer layer and window layer with a thickness of 100 nm respectively, using the same technique. In addition, other samples of these films have been deposited on a glass substrate for the purpose of studying optical transmission and their optical properties. X-ray diffraction (HR-XRD) was used to characterize the films crystalline structures. The aim of this work is to investigate the effects of different thicknesses of CdTe thin films on the optical, Structural and electrical potential of CdTe/V2O5/SnO2 films and their potential applications in solar cells. The results show that using different thicknesses of CdTe-deposited thin films can enhance the performance. The efficiency improved by increasing the thickness of the CdTe films, and at 500 nm it reached (3.3%), and with a Voc (0.382 Volt).
The tin oxide was deposited by using a vacuum thermal method on one silicon base to form four detectors , each of 0.25 cm2 in size and separated by 0.15mm. Differences in the properties of manufactured optical detectors were studied in the same method, conditions, and at the same time . The results indicated that the thickness of the films (200nm, 200nm, 170nm, 180nm). And the results haven't changed much when trying to grow another membrane. The results of the electrical properties showed a convergence in the voltage barriers (0.74, 0.75, 0.76, 0.77)V for thickness (200nm, 200nm, 170nm, 180nm) respectively, but the ideal factor between a large difference in one of the detectors (5.9, 6.1, 6, 3.5). The lighting current increases with the incident of the optical power. The results showed that the rise time of the thinnest thickness reached (0.096µs), which is the fastest among the detectors. While the thickest film has off time (8.2µs), it is the fastest time for relaxation among other detectors.
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