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In this paper, an organic interlayer, Rs, and Nss on the transport- mechanisms (TMs), both the Au/n-Si (MS) and Au/(Nanographite-PVP/n-Si (MPS) (SDs) were performed onto the same Si-wafer in same-conditions. Some electrical parameters of them have been investigated. The interface-traps/states (D it/N ss) were extracted from the IF-VF data as function of energy (Ec-Ess). These results show that the N ss for MPS is much-lower than MS SD and increase from the midgap-energy towards the E c like U-shape. Double-logarithmic IF-VF graphs of them show three linear-regimes for low, intermediate, and high-voltages and in these regimes, TM are governed by ohmic, trap/space charge limited currents (TCLCs/SCLCs), respectively. All these results show that (NG:PVP) interlayer leads to an increase in rectifier-ratio (RR=IF/IR ), BH, R sh, and decrease in N ss, reverse saturation-current (I o), and n. Thus, (NG:PVP) can be successfully utilized as interfacial layer with high performance characteristics.

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