No abstract

The formation of self-organized Si nanostructures induced by Mo seeding during normal incidence Ar+ ion bombardment at room temperature is reported. Silicon surfaces without Mo seeding develop only power-law roughness during 1000eV ion bombardment at normal incidence, in agreement with scaling theory expectations of surface roughening. However, supplying Mo atoms to the surface during ion bombardment seeds the development of highly correlated, nanoscale structures (“dots”) that are typically 3nm high with a spatial wavelength of approximately 30nm. With time, these saturate and further surface roughening is dominated by the growth of long-wavelength corrugations.

In the Central

No abstract

A study of ripple formation on sapphire surfaces by 300 -2000 eV Ar + ion bombardment is presented. Surface characterization by in-situ synchrotron grazing incidence small angle x-ray scattering and ex-situ atomic force microscopy is performed in order to study the wavelength of ripples formed on sapphire (0001) surfaces. We find that the wavelength can be varied over a remarkably wide range -nearly two orders of magnitude -by changing the ion incidence angle.Within the linear theory regime, the ion induced viscous flow smoothing mechanism explains the general trends of the ripple wavelength at low temperature and incidence angles larger than 30 • . In this model, relaxation is confined to a few-nm thick damaged surface layer. The behavior at high temperature suggests relaxation by surface diffusion. However, strong smoothing is inferred from the observed ripple wavelength near normal incidence, which is not consistent with either surface diffusion or viscous flow relaxation.