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Abstract. Polystyrene (PS) polymer doped with DCM laser dye thin films have prepared on glass substrate using casting method. The obtained PS doped with DCM thin films were treated at different annealing temperatures such (30, 40, 50, 60, 70) o C. It was observed from result that the allowed direct electronic transitions energy gap was increased from 2.21 up to 2.3e.V as the temperature increasing from 30-70 o C. And the allowed indirect electronic transition energy gap rose from 0.06 to 0.15e.V as the temperature increasing. The allowed indirect phonon energy also was decreased at the same range of temperature. The different effect of temperature variation was observed on the optical properties of PS doped with DCM thin films.

No abstract

Polystyrene (PS) polymer doped with DCM laser dye thin films have prepared on glass substrate using casting method. The obtained PS doped with DCM thin films were treated at different annealing temperatures such (30, 40, 50, 60, 70) °C. It was observed from result that the allowed direct electronic transitions energy gap was increased from 2.21 up to 2.3e.V as the temperature increasing from 30-70°C. And the allowed indirect electronic transition energy gap rose from 0.06 to 0.15e.V as the temperature increasing. The allowed indirect phonon energy also was decreased at the same range of temperature. The different effect of temperature variation was observed on the optical properties of PS doped with DCM thin films.

"In the present work Polystyrene (PS) polymer doped with DCM laser dye thin films have been prepared on glass substrate using casting method. The final samples of PS doped with DCM thin films were treated with different annealing temperatures at (30, 40, 50, 60) oC. Optical absorption and transmission spectra of the prepared thin films were recorded using UV-VIS double beam spectrometer in the wavelength range from 190 to 1100 nm. The results shown that the allowed direct electronic transitions energy gap increased from 2.08 up to 2.25e.V as the temperature increasing from 30 to 60oC, whereas the allowed indirect electronic transition energy gap increase from 2.02 up to 2.17 eV as the temperature increase from 30 to 60oC. The effect of temperature on the optical properties such as Urbach’s energy, Refractive index, Extinction coefficient, Critical angle, Brewster angle, and Finesse coefficient of PS doped with DCM thin films also studied in this work.