No abstract

The article considers a method for obtaining deuterium storage on titanium samples. The depth of penetration of deuterium ions into the outer surface of porous titanium is calculated by increasing the resistance of the samples. Higher resistance of the samples is shown to be caused by the creation of a dielectric layer of titanium deuteride on the surface. It was proven that the depth of penetration of deuterium ions into the surfaces of the samples is significantly greater than the classical concept about the doping process explains. The design of an ion doping unit contains a vacuum working chamber with a working table for placing samples. The ion beam comes from an ion source in crossed electric and magnetic fields of the Penning type. The working gas of the ion source is deuterium. The ion source gas is supplied through a special fitting in the design of the ion source, connected to the deuterium cylinder through a special leak. The working chamber is pumped out by a high-vacuum unit, to which a pre-vacuum pump is connected at the outlet. The ion implantation unit is electrically powered from three power sources. A power supply with a voltage of up to 5 [kV] and a current of up to 100 [mA] feeds the gas discharge of the source. The 10 [kV] power supply gives a negative potential to the target, and deuterium ions coming out of the hole in the cathode of the ion source are accelerated towards the desktop with the power supply up to 40 [kV] and up to 10 [ma].