Рассмотрено получение хранилища дейтерия на спеченных пористых титановых образцах. Рассчитана глубина проникновения ионов дейтерия в поверхность пористого титана, за счет увеличения сопротивления образцов. Показано увеличение сопротивления образцов за счет образования на поверхности диэлектрического слоя дейтерида титана. Найдено, что глубина проникновения ионов дейтерия в поверхности образцов значительно больше по сравнению с классическими представлениями о процессе легирования. Конструкция установки ионного легирования содержит вакуумную рабочую камеру, с рабочим столом для размещения образцов. Ионный пучок поступает из ионного источника в скрещенных электрических и магнитных полях типа Пеннинга. Рабочим газом ионного источника служит дейтерий. Газовое питание ионного источника происходит через специальный штуцер в конструкции ионного источника, соединенный с баллоном дейтерия через специальный натекатель. Рабочая камера откачивается высоковакуумным агрегатом, к которому присоединён на выходе форвакуумный насос. Электрическое питание установки ионной имплантации осуществляется от трех источников питания. Источник питания с напряжением до 5 кВ и током до 100 мА питает газовый разряд источника. Блок питания на 10 кВ питает отрицательным потенциалом мишень, и выходящие из отверстия в катоде ионного источника ионы дейтерия ускоряются на рабочий стол третьим блоком питания до 40 кВ и до 10 мА. Схема приведена на рисунке. Ключевые слова: ионная установка, дейтерий, легирование, глубина проникновения ионов, блок питанияThe acquisition of deuterium storage on sintered porous titanium samples was considered. The depth of penetration of ions on the surface of porous titanium is calculated by increasing the resistance of the samples. An increased number of samples was shown due to the formation of a titanium deuteride dielectric layer on the surface. Found that the depth of penetration in other areas. The design of the ion doping unit contains a vacuum working chamber, with a working table for placing the samples. The ion beam comes from the main source in crossed Penning-type electric and magnetic fields. The working gas of the ion source is deuterium. Gas supply of the ion source occurs through a special fitting in the design of the ion source, connected to a deuterium balloon through a special leak. The working chamber is pumped out by a high-vacuum unit to which the foreline pump is connected at the outlet. Electric power supply of ion implantation is carried out from three power sources. A power source with a voltage of up to 5 kV and a current of up to 100 mA feeds the gas discharge of the source. A 10 kV power supply feeds negative potentials, up to 40 kV and up to 10 mA. The scheme is shown in the figure.

The objective of this paper is to demonstrate the applicability of an ion implantation technique for catalyst manufacturing. The increasing production of vehicle catalysts has resulted in a growing consumption of the noble metals. Traditional methods of coating, such as impregnation, are thought to reduce the porosity and speci c surface area of the catalysts. When ion implantation is used, the ions of the catalytic material are implanted into the substrate surface without aVecting these properties. Several catalysts on diVerent substrates were prepared by ion implantation and tested. The platinum-implanted catalyst showed a carbon monoxide (CO) conversion eYciency equal to that of the impregnated catalyst but with a 15 times lower platinum content. The CO conversion eYciency of the base metal based catalyst is doubled by platinum implantation. Details of the ion implantation parameters and test results are provided.

The article considers the advantages of the ion implantation method compared to the existing methods of vacuum sputtering. It is shown that surface properties can vary considerably and the surface treatment can cause the increase of the sample material surface area. The article also provides the evidence proving that after ion implantation the surface enhances its catalytic activity and changes its mechanic properties. It presents the ion implantation unit used to implement this method along with its operating principle. The authors describe a technological coating process for work surfaces of various intended uses. The article provides the results of application of hardening coatings onto the tool for wood products processing, onto a perishable hard-carbide tool with mechanical mounting, onto a high-speed cutting tool and on face mills with hard-alloy soldering in metalwork, catalytic coatings in car industry and heat and power engineering. The results of the tests performed on the products treated with ion implantation demonstrated that the installation of ion (corpuscular) implantation enables getting catalytic surfaces, enhancing strength, wear-, heat-and corrosion resistance of equipment.

The method of the gas turbine unit and the waste heat boiler gas-air duct circuit modernization is considered. The operation scheme of a gas turbine unit and a waste heat boiler with the use of a catalytic afterburner has been shown. There is also a decrease in nitrogen and carbon oxides in the exhaust steam-and-gas mixture due to a deeper cleaning process of the exhaust steam and gas mixture, which leads to an increase in the service life of the waste heat boiler [1]. A more complete process of heat transfer to the coolant in the furnace section of the boiler is performed due to the cleaner steam and gas mixture in the waste heat boiler and due to a decrease in the boiler tubes growth formation by the combustion products. This makes it possible to reduce the cost of fuel consumption by gas burners of the waste heat boiler. Also, as a result of this process, it is possible to reduce fuel consumption for the needs of heating the feed water and the auxiliary needs of a power unit. This article proposes to use lattice devices in the afterburner, treated with active substances by the ion implantation method, as one of the most promising ways of modifying lattice surfaces [2 – 6]. These processes occurring when the steam-and-gas mixture passes through the afterburner, allow increasing the cycle efficiency factor and limit of maximum allowable concentrations (MAC) emissions for various options for the exhaust steam-and-gas mixture utilization of a gas turbine unit (GTU) and heat supply to the waste heat boiler.

The article considers a method for obtaining deuterium storage on titanium samples. The depth of penetration of deuterium ions into the outer surface of porous titanium is calculated by increasing the resistance of the samples. Higher resistance of the samples is shown to be caused by the creation of a dielectric layer of titanium deuteride on the surface. It was proven that the depth of penetration of deuterium ions into the surfaces of the samples is significantly greater than the classical concept about the doping process explains. The design of an ion doping unit contains a vacuum working chamber with a working table for placing samples. The ion beam comes from an ion source in crossed electric and magnetic fields of the Penning type. The working gas of the ion source is deuterium. The ion source gas is supplied through a special fitting in the design of the ion source, connected to the deuterium cylinder through a special leak. The working chamber is pumped out by a high-vacuum unit, to which a pre-vacuum pump is connected at the outlet. The ion implantation unit is electrically powered from three power sources. A power supply with a voltage of up to 5 [kV] and a current of up to 100 [mA] feeds the gas discharge of the source. The 10 [kV] power supply gives a negative potential to the target, and deuterium ions coming out of the hole in the cathode of the ion source are accelerated towards the desktop with the power supply up to 40 [kV] and up to 10 [ma].