No abstract

Successful optimization of the thermoelectric (TE) performance of materials, described by the figure of merit zT, is a key enabler for its application in energy harvesting or Peltier cooling devices. While the zT value of bulk materials is accessible by a variety of commercial measurement setups, precise determination of the zT value for thin and thick films remains a great challenge. This is particularly relevant for films synthesized by electrochemical deposition, where the TE material is deposited onto an electrically conductive seed layer causing an in‐plane short circuit. Therefore, a platform for full in‐plane zT characterization of electrochemically deposited TE materials is developed, eliminating the impact of the electrically conducting seed layer. The characterization is done using a suspended TE material within a transport device which was prepared by photolithography in combination with chemical etching steps. An analytical model to determine the thermal conductivity is developed and the results verified using finite element simulations. Taken together, the full in‐plane zT characterization provides an inevitable milestone for material optimization under realistic conditions in TE devices.

The entropy of conduction electrons was evaluated utilizing the thermodynamic definition of the Seebeck coefficient as a tool. This analysis was applied to two different kinds of scientific questions that can—if at all—be only partially addressed by other methods. These are the field-dependence of meta-magnetic phase transitions and the electronic structure in strongly disordered materials, such as alloys. We showed that the electronic entropy change in meta-magnetic transitions is not constant with the applied magnetic field, as is usually assumed. Furthermore, we traced the evolution of the electronic entropy with respect to the chemical composition of an alloy series. Insights about the strength and kind of interactions appearing in the exemplary materials can be identified in the experiments.