ABSTRACT:Heterogeneous integration of III-V semiconductor compounds on Silicon on Insulator wafers is one the key technology for next generation on chip optical interconnects. Within this context the use of photonic crystals lasers represent a disruptive solution in terms of footprint, activation energy and ultrafast response. In this work, we propose and fabricate very compact laser sources integrated with a passive silicon waveguide circuitry, taking advantage of the efficient emission from III-V semiconductor photonic crystal nanocavities. Such micro sources often radiate only a fraction of their power into useful beams. Using a subjacent Silicon-On-Insulator waveguide we capture emitted light from the cavity, evanescently, and can also probe the cavity waveguide system in transmission in order to experimentally deduce the coupling factors.During the past decades, optical devices have played a crucial role in the domain of information and communication technology, due to their ability to bring efficient solutions to data transmission and processing. Indeed, optical communications have known tremendous development, through optical fibres backed by related devices and circuits composed of light sources, optical amplifiers, wavelength multiplexers, photodetectors, etc, which have greatly revolutionized telecommunication. Increasing attention is now being devoted to optical computer-com mainly concentrated in intra-and inter-chip interconnection applications [1,2], the convergence of optics and electronics at the chip level being a necessity for the next generation processors. Here, the issues that need to be tackled are the dispatching and sorting of the mind-boggling amount of information within small footprints and above all with reduced power consumption and dissipation [3].Thus, photonic circuits should be constituted of elements able to control perfectly the propagation of light with a view to achieve "passive" functions such as guiding and filtering as well as elements dedicated to active functions such as emission, detection, amplification, switching and a multitude of others capable of manipulating optical information at will.In this context, it is very unlikely that only one class of material will completely answer to all needs.Silicon photonics, enhanced by III-V based optical functions is considered to be as one of the key technologies combining the best of both materials leading to highly versatile hybrid photonics platform and opening up the field to large scale photonic integration. Indeed, Silicon transparency at telecom wavelengths and the high-index contrast with silica allows the fabrication of extremely compact lowloss single mode waveguides (~2dB/cm) [4,5] that can be used for bringing the information where it

The century-old study of photon-phonon coupling has seen a remarkable revival in the past decade. Driven by early observations of dynamical back-action, the field progressed to ground-state cooling and the counting of individual phonons. A recent branch investigates the potential of traveling-wave, optically broadband photon-phonon interaction in silicon circuits. Here, we report continuous-wave Brillouin gain exceeding the optical losses in a series of suspended silicon beams, a step towards selective on-chip amplifiers. We obtain efficiencies up to 10 W m , 4 1 1 -the highest to date in the phononic gigahertz range. We also find indications that geometric disorder poses a significant challenge towards nanoscale phonon-based technologies.

Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

The ever-increasing demand for integrated, low power interconnect systems is pushing the bandwidth density of CMOS photonic devices. Taking advantage of the strong Franz-Keldysh effect in the C and L communication bands, electro-absorption modulators in Ge and GeSi are setting a new standard in terms of device footprint and power consumption for next generation photonics interconnect arrays. In this paper, we present a compact, low power electro-absorption modulator (EAM) Si/GeSi hetero-structure based on an 800 nm SOI overlayer with a modulation bandwidth of 56 GHz. The device design and fabrication tolerant process are presented, followed by the measurement analysis. Eye diagram measurements show a dynamic ER of 5.2 dB at a data rate of 56 Gb/s at 1566 nm, and calculated modulator power is 44 fJ/bit.

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